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| SI2307DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.080 @ VGS = -10 V 0.140 @ VGS = -4.5 V ID (A) -3 -2 TO-236 (SOT-23) G 1 3 D S 2 Top View SI2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -30 "20 -3 -2.5 -12 -1.25 1.25 Unit V A W 0.8 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface mounted on FR4 board. b. t v 5 sec. Document Number: 70843 S-60570--Rev. A, 16-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 100 Unit _C/W 130 2-1 SI2307DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = -10 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V TJ = 55_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -3 A VGS = -4.5 V, ID = -2.5 A VDS = -10V, ID = -3 A IS = -1.25 A, VGS = 0 V -6 0.064 0.103 4.5 -1.2 0.080 W 0.140 S V -30 V -1.0 "100 -1 -10 mA A nA Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -15 V, VGS = 0, f = 1 MHz 15 V 0 MH VDS = -15 V, VGS = -10 V 15 V 10 ID ^ -3 A 3 10 1.9 2 565 126 75 pF F 15 nC C Switchingb Turn-On Time td(on) tr Turn-Off Time td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. VDD = -15 V, RL = 15 W 15 V ID ^ -1.0 A, VGEN = -10 V RG = 6 W 10 9 27 7 20 20 ns 50 16 www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70843 S-60570--Rev. A, 16-Nov-98 SI2307DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 12 Output Characteristics VGS = 10 thru 5 V 12 Transfer Characteristics TC = -55_C 10 I D - Drain Current (A) I D - Drain Current (A) 4V 8 10 25_C 8 125_C 6 6 4 3V 2 4 2 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 800 700 Ciss r DS(on) - On-Resistance ( W ) 0.4 C - Capacitance (pF) 600 500 400 300 200 100 VGS = 10 V 0 0 2 4 6 8 10 0 0 6 Crss Capacitance 0.2 VGS = 4.5 V Coss 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 3 A V GS - Gate-to-Source Voltage (V) 8 Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A 1.4 r DS(on) - On-Resistance (Normalized) 0 2 4 6 8 10 6 1.2 4 1.0 2 0.8 0 0.6 -50 0 50 100 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70843 S-60570--Rev. A, 16-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI2307DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1.0 10.0 r DS(on) - On-Resistance ( W ) 0.8 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 1.0 TJ = 25_C 0.6 ID = -3 A 0.4 0.2 0.1 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.6 Threshold Voltage 12 10 Single Pulse Power 0.4 V GS(th) Variance (V) 8 ID = 250 mA 0.0 Power (W) 0.2 6 TA = 25_C Single Pulse 4 -0.2 2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 Time (sec) 100 500 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1.00 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.10 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70843 S-60570--Rev. A, 16-Nov-98 |
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